The Impact of Thickness Control in HfSiON Gate Dielectric on Electron Mobility with sub-nm EOT
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-09-13
著者
-
YUGAMI J.
Renesas Technology Corporation
-
Yugami J.
Process Technology Development Div. Production And Technology Unit Renesas Technology Corp.
-
MIZUTANI M.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
-
INOUE M.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
-
TSUCHIMOTO J.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
-
YONEDA M.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
-
Tsuchimoto J.
Process Technology Development Div. Production And Technology Unit Renesas Technology Corp.
-
HAYASHI T.
Process Technology Development Div., RENESAS Technology Corp.
-
NOMURA K.
Wafer Process Engineering Dept. (1), RENESAS Semiconductor Engineering Corp.
-
OHNO Y.
Process Technology Development Div., RENESAS Technology Corp.
-
Yoneda M.
Process Technology Development Div. Production And Technology Unit Renesas Technology Corp.
-
Mizutani M.
Process Technology Development Div. Production And Technology Unit Renesas Technology Corp.
関連論文
- Low Threshold Voltage Gate-First pMISFETs with Poly-Si/TiN/HfSiON Stacks Fabricated with PVD-based In-situ Solid Phase Interface Reaction (SPIR) Method
- Phase and Composition Control of Ni-FUSI gates by N_2 I/I with Double Ni-silicidation
- Diffusion control technique in TiN stacked metal gate electrodes for p-MISFETs
- The Impact of Thickness Control in HfSiON Gate Dielectric on Electron Mobility with sub-nm EOT