Analysies of the Radiation Caused Characteristics Change in SOI MOSFETS Using Field Shield Isolation

スポンサーリンク

概要

論文の詳細を見る
1998-09-07

著者

関連論文

Wide-Range V_ Controllable SOTB (Silicon on Thin BOX) Integrated with Bulk CMOS Featuring Fully Silicided NiSi Gate Electrode
Improvement of Device Characteristics Variation by using a Body-Bias Controlling Technology Based on a Hybrid Trench Isolated SOI
A Highly Reliable 0.18μm SOI CMOS Technology for 3.3V/1.8V Operation Using Hybrid Trench Isolation and Dual Gate Oxide
Analysis of the Charge Density at Field Oxide/SOI and SOI/Buried Oxide Interfaces in Partially Depleted SOI MOSFET's with and without Hydrogenation
A Method of Hot Carrier Lifetime Prediction in Partially-Depleted Floating SOI NMOSFETs
Direct Measurement of Transient Drain Current in PD-SOI MOSFETs Using Nuclear Microprobe for Highly Reliable Device Design
Analysies of the Radiation Caused Characteristics Change in SOI MOSFETS Using Field Shield Isolation
Clarification of Floating-Body Effects on Current Drivability in Deep Sub-Quarter Micron Partially-Depleted SOI MOSFET's
High Performance 0.2μm Dual Gate CMOS by Suppression of Transient-Enhanced-Diffusion Using Rapid Thermal Annealing Technologies
High-Speed 0.5μm SOI 1/8 Frequency Divider with Body-Fixed Structure for Wide Range of Applications

スポンサーリンク