YAMAGUCHI Y. | ULSI Development Center, Mitsubishi Electric Corporation

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著作論文

A Highly Reliable 0.18μm SOI CMOS Technology for 3.3V/1.8V Operation Using Hybrid Trench Isolation and Dual Gate Oxide
Analysis of the Charge Density at Field Oxide/SOI and SOI/Buried Oxide Interfaces in Partially Depleted SOI MOSFET's with and without Hydrogenation
A Method of Hot Carrier Lifetime Prediction in Partially-Depleted Floating SOI NMOSFETs
Direct Measurement of Transient Drain Current in PD-SOI MOSFETs Using Nuclear Microprobe for Highly Reliable Device Design
Analysies of the Radiation Caused Characteristics Change in SOI MOSFETS Using Field Shield Isolation
Clarification of Floating-Body Effects on Current Drivability in Deep Sub-Quarter Micron Partially-Depleted SOI MOSFET's
High-Speed 0.5μm SOI 1/8 Frequency Divider with Body-Fixed Structure for Wide Range of Applications

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