INOUE Y. | ULSI Laboratory, Mitsubishi Electric Corporation

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著作論文

Analysis of the Charge Density at Field Oxide/SOI and SOI/Buried Oxide Interfaces in Partially Depleted SOI MOSFET's with and without Hydrogenation
A Method of Hot Carrier Lifetime Prediction in Partially-Depleted Floating SOI NMOSFETs
Advanced Retrograde Well Technology for 90-nm-node Embedded SRAM by High-Energy Parallel Beam
Saturation Phenomenon of Stress Induced Gate Leakage Current
High Performance 0.2μm Dual Gate CMOS by Suppression of Transient-Enhanced-Diffusion Using Rapid Thermal Annealing Technologies
High-Speed 0.5μm SOI 1/8 Frequency Divider with Body-Fixed Structure for Wide Range of Applications
80nm High Performance CMOSFET with Low Gate Leakage Current Using Conventional Thin Gate Nitric Oxide

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