Inuishi M. | Ulsi Development Center Mitsubishi Electric Corporation

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概要

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著作論文

A Highly Reliable 0.18μm SOI CMOS Technology for 3.3V/1.8V Operation Using Hybrid Trench Isolation and Dual Gate Oxide
Direct Measurement of Transient Drain Current in PD-SOI MOSFETs Using Nuclear Microprobe for Highly Reliable Device Design
Clarification of Floating-Body Effects on Current Drivability in Deep Sub-Quarter Micron Partially-Depleted SOI MOSFET's
Substrate Engineering for Reduction of α-Particle-Induced Charge Collection Efficiency
Advanced Retrograde Well Technology for 90-nm-node Embedded SRAM by High-Energy Parallel Beam
Saturation Phenomenon of Stress Induced Gate Leakage Current
Clarification of Nitridation Effect on Oxidation Methods
Reliability of Non-Uniformly Doped Channel (NUDC) MOSFETs for Sub-Quarter-Micron Region
Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter Micron LDD MOSFETs
Optimum Voltage Scaling and Structure Design for the Low Voltage Operation of FN Type Flash EEPROM with High Reliability and Constant Programming Time
80nm High Performance CMOSFET with Low Gate Leakage Current Using Conventional Thin Gate Nitric Oxide

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