UENO S. | ULSI Development Center, Mitsubishi Electric Corporation

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概要

• 同名の論文著者
• ULSI Development Center, Mitsubishi Electric Corporationの論文著者

関連著者

• Inuishi M.

  Ulsi Development Center Mitsubishi Electric Corporation

• UENO S.

  ULSI Development Center, Mitsubishi Electric Corporation

• INOUE Y.

  ULSI Laboratory, Mitsubishi Electric Corporation

• MIYOSHI H.

  ULSI Laboratory, Mitsubishi Electric Corporation

• Inuishi M.

  Process Technology Development Div. Renesas Technology Corp.

• Inuishi M.

  Renesas Technology Corp. Wafer Process Engineering Development Dept.

• KUROI T.

  ULSI Laboratory, Mitsubishi Electric Corporation

• Kuroi T.

  Process Technology Development Div. Renesas Technology Corp.

• UMEDA H.

  Process Technology Development Div., Renesas Technology Corp.

• TERAMOTO A.

  ULSI Development Center, Mitsubishi Electric Corporation

• UMEDA H.

  ULSI Development Center, Mitsubishi Electric Corporation

• Kuroi T.

  Ulsi Laboratory Mitsubishi Electric Corporation

• Kuroi T.

  Process Technology Development Div Renesas Technology Corp.

• Ajika N.

  Ulsi Laboratory Mitsubishi Electric Corporation

• ODA H.

  ULSI Laboratory, Mitsubishi Electric Corporation

• Teramoto A.

  Ulsi Development Center Mitsubishi Electric Corporation

• Umeda H.

  Process Technology Development Div. Renesas Technology Corp.

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著作論文

• Saturation Phenomenon of Stress Induced Gate Leakage Current
• Optimum Voltage Scaling and Structure Design for the Low Voltage Operation of FN Type Flash EEPROM with High Reliability and Constant Programming Time

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