Inuishi M. | Process Technology Development Div. Renesas Technology Corp.
スポンサーリンク
概要
関連著者
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Inuishi M.
Process Technology Development Div. Renesas Technology Corp.
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Inuishi M.
Renesas Technology Corp. Wafer Process Engineering Development Dept.
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Kuroi T.
Process Technology Development Div. Renesas Technology Corp.
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Kuroi T.
Process Technology Development Div Renesas Technology Corp.
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Inuishi M.
Ulsi Development Center Mitsubishi Electric Corporation
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Kuroi T.
Ulsi Laboratory Mitsubishi Electric Corporation
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KUROI T.
ULSI Laboratory, Mitsubishi Electric Corporation
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HIRAO T.
ULSI Laboratory, Mitsubishi Electric Corporation
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Hirao T.
Ulsi Laboratory Mitsubishi Electric Corporation
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OKUMURA Y.
ULSI Laboratory, Mitsubishi Electric Corporation
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Okumura Y.
Ulsi Laboratory Mitsubishi Electric Corporation
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INOUE Y.
ULSI Laboratory, Mitsubishi Electric Corporation
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Ohji Y.
Renesas Technology Corp. Wafer Process Engineering Development Dept.
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ISHIBASHI M.
Process Technology Development Div, Renesas Technology Corp.
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HORITA K.
Process Technology Development Div, Renesas Technology Corp.
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KITAZAWA M.
Process Technology Development Div, Renesas Technology Corp.
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KUROI T.
Process Technology Development Div, Renesas Technology Corp.
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EIMORI T.
Renesas Technology Corp., Wafer Process Engineering Development Dept.
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YAMASHITA T.
ULSI Laboratory, Mitsubishi Electric Corporation
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UMEDA H.
Process Technology Development Div., Renesas Technology Corp.
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TERAMOTO A.
ULSI Development Center, Mitsubishi Electric Corporation
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SHIMIZU S.
ULSI Laboratory, Mitsubishi Electric Corporation
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KUSUNOKI S.
ULSI Laboratory, Mitsubishi Electric Corporation
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Kusunoki S.
Ulsi Laboratory Mitsubishi Electric Corporation
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Horita K.
Process Technology Development Div. Renesas Technology Corp.
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Kitazawa M.
Process Technology Development Div Renesas Technology Corp.
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Teramoto A.
Ulsi Development Center Mitsubishi Electric Corporation
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Umeda H.
Process Technology Development Div. Renesas Technology Corp.
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INOUE Y.
Process Technology Development Div. Renesas Technology Crop.
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SAWADA M.
Process Technology Development Div, Renesas Technology Corp.
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IGARASHI M.
Process Technology Development Div, Renesas Technology Corp.
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EIMORI T.
Process Technology Development Div, Renesas Technology Corp.
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KOBAYASHI K.
Process Technology Development Div, Renesas Technology Corp.
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OHJI Y.
Process Technology Development Div, Renesas Technology Corp.
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HAYASHI T.
Renesas Technology Corp., Wafer Process Engineering Development Dept.
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YAMASHITA T.
Renesas Technology Corp., Wafer Process Engineering Development Dept.
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SHIGA K.
Renesas Technology Corp., Wafer Process Engineering Development Dept.
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HAYASHI K.
Renesas Technology Corp., Wafer Process Engineering Development Dept.
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ODA H.
Renesas Technology Corp., Wafer Process Engineering Development Dept.
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KOMORI S.
ULSI Laboratory, Mitsubishi Electric Corporation
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Eimori T.
Renesas Technology Corp. Wafer Process Engineering Development Dept.
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KAWAHARA T.
Process Technology Development Div., Renesas Technology Corp.
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IKEDA T.
Process Technology Development Div., Renesas Technology Corp.
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YAMASHITA T.
Process Technology Development Div., Renesas Technology Corp.
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KITAZAWA M.
ULSI Development Center, Mitsubishi Electric Corporation
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KAWASAKI Y.
ULSI Development Center, Mitsubishi Electric Corporation
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TAKASHINO H.
ULSI Development Center, Mitsubishi Electric Corporation
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UENO S.
ULSI Development Center, Mitsubishi Electric Corporation
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UMEDA H.
ULSI Development Center, Mitsubishi Electric Corporation
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SHIRAHATA S.
ULSI Laboratory, Mitsubishi Electric Corporation
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ANMA M.
ULSI Laboratory, Mitsubishi Electric Corporation
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SHIRAHATA M.
ULSI Laboratory, Mitsubishi Electric Corporation
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ABE Y.
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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Takashino H.
Ulsi Development Center Mitsubishi Electric Corporation
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Shirahata M.
Ulsi Laboratory Mitsubishi Electric Corporation
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Shirahata S.
Ulsi Laboratory Mitsubishi Electric Corporation
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Kawahara T.
Process Technology Development Div. Renesas Technology Corp.
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Anma M.
Ulsi Laboratory Mitsubishi Electric Corporation
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Inuishi M.
Process Technology Development Div Renesas Technology Corp.
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Ohji Y.
Renesas Technology Corp.
著作論文
- A Novel STI Process from the View Point of Total Strain Process Design for 45nm Node Devices and Beyond
- Suppression of Boron Penetration from S/D Extension to improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65nm node CMOS and beyond
- Substrate Engineering for Reduction of α-Particle-Induced Charge Collection Efficiency
- Layout Independent Transistor with Stress-controlled and Highly Manufacturable STI Process
- Advanced Retrograde Well Technology for 90-nm-node Embedded SRAM by High-Energy Parallel Beam
- Saturation Phenomenon of Stress Induced Gate Leakage Current
- Clarification of Nitridation Effect on Oxidation Methods
- Reliability of Non-Uniformly Doped Channel (NUDC) MOSFETs for Sub-Quarter-Micron Region
- Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter Micron LDD MOSFETs