EIMORI T. | Renesas Technology Corp., Wafer Process Engineering Development Dept.
スポンサーリンク
概要
関連著者
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Inuishi M.
Process Technology Development Div. Renesas Technology Corp.
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Ohji Y.
Renesas Technology Corp. Wafer Process Engineering Development Dept.
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Inuishi M.
Renesas Technology Corp. Wafer Process Engineering Development Dept.
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EIMORI T.
Renesas Technology Corp., Wafer Process Engineering Development Dept.
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ISHIBASHI M.
Process Technology Development Div, Renesas Technology Corp.
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HORITA K.
Process Technology Development Div, Renesas Technology Corp.
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SAWADA M.
Process Technology Development Div, Renesas Technology Corp.
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KITAZAWA M.
Process Technology Development Div, Renesas Technology Corp.
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IGARASHI M.
Process Technology Development Div, Renesas Technology Corp.
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KUROI T.
Process Technology Development Div, Renesas Technology Corp.
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EIMORI T.
Process Technology Development Div, Renesas Technology Corp.
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KOBAYASHI K.
Process Technology Development Div, Renesas Technology Corp.
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OHJI Y.
Process Technology Development Div, Renesas Technology Corp.
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HAYASHI T.
Renesas Technology Corp., Wafer Process Engineering Development Dept.
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YAMASHITA T.
Renesas Technology Corp., Wafer Process Engineering Development Dept.
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SHIGA K.
Renesas Technology Corp., Wafer Process Engineering Development Dept.
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HAYASHI K.
Renesas Technology Corp., Wafer Process Engineering Development Dept.
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ODA H.
Renesas Technology Corp., Wafer Process Engineering Development Dept.
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Kuroi T.
Process Technology Development Div. Renesas Technology Corp.
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Eimori T.
Renesas Technology Corp. Wafer Process Engineering Development Dept.
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Kuroi T.
Process Technology Development Div Renesas Technology Corp.
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Horita K.
Process Technology Development Div. Renesas Technology Corp.
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Kitazawa M.
Process Technology Development Div Renesas Technology Corp.
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Inuishi M.
Process Technology Development Div Renesas Technology Corp.
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Ohji Y.
Renesas Technology Corp.
著作論文
- A Novel STI Process from the View Point of Total Strain Process Design for 45nm Node Devices and Beyond
- Suppression of Boron Penetration from S/D Extension to improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65nm node CMOS and beyond