Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter Micron LDD MOSFETs
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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Inuishi M.
Process Technology Development Div. Renesas Technology Corp.
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Inuishi M.
Ulsi Development Center Mitsubishi Electric Corporation
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Inuishi M.
Renesas Technology Corp. Wafer Process Engineering Development Dept.
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HIRAO T.
ULSI Laboratory, Mitsubishi Electric Corporation
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Kuroi T.
Process Technology Development Div. Renesas Technology Corp.
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SHIMIZU S.
ULSI Laboratory, Mitsubishi Electric Corporation
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OKUMURA Y.
ULSI Laboratory, Mitsubishi Electric Corporation
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Kuroi T.
Ulsi Laboratory Mitsubishi Electric Corporation
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Kuroi T.
Process Technology Development Div Renesas Technology Corp.
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KUSUNOKI S.
ULSI Laboratory, Mitsubishi Electric Corporation
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Kusunoki S.
Ulsi Laboratory Mitsubishi Electric Corporation
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Hirao T.
Ulsi Laboratory Mitsubishi Electric Corporation
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Okumura Y.
Ulsi Laboratory Mitsubishi Electric Corporation
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