Direct Measurement of Transient Drain Current in PD-SOI MOSFETs Using Nuclear Microprobe for Highly Reliable Device Design
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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TAKAI M.
Research Information Center, Institute of Plasma Physics, Nagoya University
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IWAMATSU T.
Renesas Technology Corp.
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HIRANO Y.
Process Technology Development Div. Renesas Technology Crop.
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IWAMATSU T.
Process Technology Development Div. Renesas Technology Crop.
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IWAMATSU T.
ULSI Development Center, Mitsubishi Electric Corporation
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YAMAGUCHI Y.
ULSI Development Center, Mitsubishi Electric Corporation
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MAEGAWA S.
ULSI Development Center, Mitsubishi Electric Corporation
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INUISHI M.
ULSI Development Center, Mitsubishi Electric Corporation
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NAKAYAMA K.
Research Center for Materials Science at Extreme Conditions, Osaka University
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TAKAOKA H.
Research Center for Materials Science at Extreme Conditions, Osaka University
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KINOMURA A.
ONRI, AIST
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HORINO Y.
ONRI, AIST
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NISHIMURA T.
ULSI Laboratory, Mitsubishi Electric Corporation
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Inuishi M.
Ulsi Development Center Mitsubishi Electric Corporation
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Kinomura A.
Onri Aist
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Maeda S.
Ulsi Development Center Mitsubishi Electric Corporation
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Takaoka H.
Research Center For Materials Science At Extreme Conditions Osaka University
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Takai M.
Research Center For Materials Science At Extreme Conditions Osaka University
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Iwamatsu T.
Ulsi Laboratory Mitsubishi Electric Corporation
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