A Method of Hot Carrier Lifetime Prediction in Partially-Depleted Floating SOI NMOSFETs
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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Joachim H.
Ulsi Laboratory Mitsubishi Electric Corporation
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MAEDA S.
ULSI Development Center, Mitsubishi Electric Corporation
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YAMAGUCHI Y.
ULSI Development Center, Mitsubishi Electric Corporation
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INOUE Y.
ULSI Laboratory, Mitsubishi Electric Corporation
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MIYOSHI H.
ULSI Laboratory, Mitsubishi Electric Corporation
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YASUOKA A.
ULSI Laboratory, Mitsubishi Electric Corporation
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KIM I.-J.
ULSI Laboratory, Mitsubishi Electric Corporation
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Kim I.-j.
Ulsi Laboratory Mitsubishi Electric Corporation
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Maeda S.
Ulsi Development Center Mitsubishi Electric Corporation
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Yasuoka A.
Ulsi Laboratory Mitsubishi Electric Corporation
関連論文
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- Analysis of the Charge Density at Field Oxide/SOI and SOI/Buried Oxide Interfaces in Partially Depleted SOI MOSFET's with and without Hydrogenation
- A Method of Hot Carrier Lifetime Prediction in Partially-Depleted Floating SOI NMOSFETs
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