80nm High Performance CMOSFET with Low Gate Leakage Current Using Conventional Thin Gate Nitric Oxide
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概要
- 論文の詳細を見る
- 2001-09-25
著者
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INOUE Y.
ULSI Laboratory, Mitsubishi Electric Corporation
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Inuishi M.
Ulsi Development Center Mitsubishi Electric Corporation
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Sayama H.
Ulsi Development Center Mitsubishi Electric Corporation
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ODA H.
ULSI Laboratory, Mitsubishi Electric Corporation
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OTA K.
ULSI Development Center, Mitsubishi Electric Corporation
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- 80nm High Performance CMOSFET with Low Gate Leakage Current Using Conventional Thin Gate Nitric Oxide