Analysis of the Charge Density at Field Oxide/SOI and SOI/Buried Oxide Interfaces in Partially Depleted SOI MOSFET's with and without Hydrogenation
スポンサーリンク
概要
- 論文の詳細を見る
- 1996-08-26
著者
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IWAMATSU T.
Renesas Technology Corp.
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IWAMATSU T.
Process Technology Development Div. Renesas Technology Crop.
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IPPOSHI T.
Process Technology Development Div. Renesas Technology Crop.
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Ipposhi T.
Central Research Laboratory Hitachi Ltd.
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IWAMATSU T.
ULSI Development Center, Mitsubishi Electric Corporation
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YAMAGUCHI Y.
ULSI Development Center, Mitsubishi Electric Corporation
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IPPOSHI T.
ULSI Development Center, Mitsubishi Electric Corporation
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MIYAMOTO S.
ULSI Laboratory, Mitsubishi Electric Corporation
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INOUE Y.
ULSI Laboratory, Mitsubishi Electric Corporation
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MIYOSHI H.
ULSI Laboratory, Mitsubishi Electric Corporation
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YASUOKA A.
ULSI Laboratory, Mitsubishi Electric Corporation
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Yasuoka A.
Ulsi Laboratory Mitsubishi Electric Corporation
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Ishigaki T.
Central Research Laboratory Hitachi Ltd.
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Iwamatsu T.
Ulsi Laboratory Mitsubishi Electric Corporation
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