Improvement of Device Characteristics Variation by using a Body-Bias Controlling Technology Based on a Hybrid Trench Isolated SOI
スポンサーリンク
概要
- 論文の詳細を見る
- 2006-09-13
著者
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Maki Y.
Central Research Laboratory Hitachi Ltd.
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IWAMATSU T.
Renesas Technology Corp.
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MAKI Y.
Process Technology Development Div. Renesas Technology Crop.
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HIRANO Y.
Process Technology Development Div. Renesas Technology Crop.
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TSUJIUCHI M.
Process Technology Development Div. Renesas Technology Crop.
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IWAMATSU T.
Process Technology Development Div. Renesas Technology Crop.
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OZAWA O.
SoC Design Technology Div. Renesas Technology Corp.
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IPPOSHI T.
Process Technology Development Div. Renesas Technology Crop.
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INOUE Y.
Process Technology Development Div. Renesas Technology Crop.
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Ipposhi T.
Central Research Laboratory Hitachi Ltd.
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Ishigaki T.
Central Research Laboratory Hitachi Ltd.
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Iwamatsu T.
Ulsi Laboratory Mitsubishi Electric Corporation
関連論文
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- Improvement of Device Characteristics Variation by using a Body-Bias Controlling Technology Based on a Hybrid Trench Isolated SOI
- A Highly Reliable 0.18μm SOI CMOS Technology for 3.3V/1.8V Operation Using Hybrid Trench Isolation and Dual Gate Oxide
- Analysis of the Charge Density at Field Oxide/SOI and SOI/Buried Oxide Interfaces in Partially Depleted SOI MOSFET's with and without Hydrogenation
- Direct Measurement of Transient Drain Current in PD-SOI MOSFETs Using Nuclear Microprobe for Highly Reliable Device Design
- Analysies of the Radiation Caused Characteristics Change in SOI MOSFETS Using Field Shield Isolation
- Clarification of Floating-Body Effects on Current Drivability in Deep Sub-Quarter Micron Partially-Depleted SOI MOSFET's
- Layout Independent Transistor with Stress-controlled and Highly Manufacturable STI Process
- High-Speed 0.5μm SOI 1/8 Frequency Divider with Body-Fixed Structure for Wide Range of Applications