Wide-Range V_<th> Controllable SOTB (Silicon on Thin BOX) Integrated with Bulk CMOS Featuring Fully Silicided NiSi Gate Electrode
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Maki Y.
Central Research Laboratory Hitachi Ltd.
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Hiramoto T.
Institute of Industrial Science
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ISHIGAKI T.
Central Research Laboratory, Hitachi, Ltd.
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TSUCHIYA R.
Central Research Laboratory, Hitachi, Ltd.
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MORITA Y.
Central Research Laboratory, Hitachi, Ltd.
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SUGII N.
Central Research Laboratory, Hitachi, Ltd.
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KIMURA S.
Central Research Laboratory, Hitachi, Ltd.
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IWAMATSU T.
Renesas Technology Corp.
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IPPOSHI T.
Renesas Technology Corp.
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INOUE Y.
Renesas Technology Corp.
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IPPOSHI T.
Process Technology Development Div. Renesas Technology Crop.
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Ipposhi T.
Central Research Laboratory Hitachi Ltd.
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Sugii N.
Central Research Laboratory Hitachi Ltd.
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Ishigaki T.
Central Research Laboratory Hitachi Ltd.
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Hiramoto T.
Institute Of Industrial Science Univ. Of Tokyo
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Tsuchiya R.
Central Research Laboratory Hitachi Ltd.
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Iwamatsu T.
Ulsi Laboratory Mitsubishi Electric Corporation
関連論文
- Short Channel Effect on Variable Threshold Voltage CMOS(VTCMOS)
- Short Channel Effect on Variable Threshold Voltage CMOS(VTCMOS)
- Wide-Range V_ Controllable SOTB (Silicon on Thin BOX) Integrated with Bulk CMOS Featuring Fully Silicided NiSi Gate Electrode
- Improvement of Device Characteristics Variation by using a Body-Bias Controlling Technology Based on a Hybrid Trench Isolated SOI
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