Three-Dimensional Electro-Thermal Compact Model for Reset Operation of Phase Change Memories

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• INOUE Y.

  Renesas Technology Corp.

• Moniwa M.

  Renesas Technology Corp.

• TSUCHIYA O.

  Renesas Technology Corp.

• ISHIKAWA K.

  Renesas Technology Corp.

• SAKAI A.

  Renesas Technology Corp.

• SONODA K.

  Renesas Technology Corp.

関連論文

• An Advanced Air Gap Process for MLC flash memories reducing Vth interference and realizing high reliability
• Wide-Range V_ Controllable SOTB (Silicon on Thin BOX) Integrated with Bulk CMOS Featuring Fully Silicided NiSi Gate Electrode
• Impact of Vth interference suppression using a novel Poly Si shield on FLASH memories
• Three-Dimensional Electro-Thermal Compact Model for Reset Operation of Phase Change Memories

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