New Measurement Technique of Sub-Bandgap Impact Ionization Current by Transient Characteristics of Partially Depleted SOI MOSFETs

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概要

• 論文の詳細を見る
• 1997-09-16

著者

• Saraya T.

  Institute of Industrial Science

• Hiramoto T.

  Institute of Industrial Science

• Saraya T.

  Institute Of Industrial Science University Of Tokyo

• TAKAMIYA M.

  Institute of Industrial Science, University of Tokyo

• DUYET T.

  Institute of Industrial Science, University of Tokyo

• Duyet T.

  Institute Of Industrial Science University Of Tokyo

• Takamiya M.

  Institute Of Industrial Science University Of Tokyo

• Hiramoto T.

  Institute Of Industrial Science University Of Tokyo

関連論文

• Short Channel Effect on Variable Threshold Voltage CMOS(VTCMOS)
• Short Channel Effect on Variable Threshold Voltage CMOS(VTCMOS)
• Short Channel Effect on Variable Threshold Voltage CMOS(VTCMOS) (2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD 2001))
• Wide-Range V_ Controllable SOTB (Silicon on Thin BOX) Integrated with Bulk CMOS Featuring Fully Silicided NiSi Gate Electrode
• Optimum Device Parameters and Scalability of Variable Threshold CMOS (VTCMOS)
• New Measurement Technique of Sub-Bandgap Impact Ionization Current by Transient Characteristics of Partially Depleted SOI MOSFETs
• Characteristics of Silicon Single Electron Transistors Controlled by Charge Injection into Silicon Nano-Crystal Floating Dots

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