Characteristics of Silicon Single Electron Transistors Controlled by Charge Injection into Silicon Nano-Crystal Floating Dots

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概要

• 論文の詳細を見る
• 1999-09-20

著者

• Hiramoto T.

  Institute of Industrial Science

• Hiramoto T.

  Institute Of Industrial Science University Of Tokyo

• TAKAHASHI N.

  Institute of Industrial Science, University of Tokyo

• ISHIKURO H.

  Institute of Industrial Science, University of Tokyo

• Ishikuro H.

  Institute Of Industrial Science University Of Tokyo

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• Optimum Device Parameters and Scalability of Variable Threshold CMOS (VTCMOS)
• New Measurement Technique of Sub-Bandgap Impact Ionization Current by Transient Characteristics of Partially Depleted SOI MOSFETs
• Characteristics of Silicon Single Electron Transistors Controlled by Charge Injection into Silicon Nano-Crystal Floating Dots

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