Optimum Device Parameters and Scalability of Variable Threshold CMOS (VTCMOS)
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Gomyo H.
Institute Of Industrial Science University Of Tokyo
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Inukai T.
Institute of Industrial Science
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Saraya T.
Institute of Industrial Science
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Sakurai T.
Institute of Industrial Science
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Hiramoto T.
Institute of Industrial Science
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TAKAMIYA M.
Institute of Industrial Science, University of Tokyo
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KOURA H.
Institute of Industrial Science, University of Tokyo
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KAWAGUCHI H.
Institute of Industrial Science, University of Tokyo
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Hiramoto T.
Institute Of Industrial Science:vlsi Design And Educational Center
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Sakurai T
Inst. Of Basic Medical Sci. Univ. Of Tsukuba
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Takamiya M.
Institute Of Industrial Science University Of Tokyo
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Koura H.
Institute Of Industrial Science University Of Tokyo
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- Wide-Range V_ Controllable SOTB (Silicon on Thin BOX) Integrated with Bulk CMOS Featuring Fully Silicided NiSi Gate Electrode
- Optimum Device Parameters and Scalability of Variable Threshold CMOS (VTCMOS)
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