Short Channel Effect on Variable Threshold Voltage CMOS(VTCMOS)
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概要
- 論文の詳細を見る
The short channel effect (SCE) on the performance of Variable Threshold voltage CMOS (VTCMOS) has been investigated. As the SCE becomes severe, the body effect factor(γ) and sub-threshold slope(S) degrade resulting in the worse off and on current-performance of a VTCMOS. Comparisons of experimental data to analytical simulations are presented to verify the SCE on the performance of a VTCMOS. New parameter, dS/dγ, is introduced to quantitatively study the SCE on the characteristics of a VTCMOS. The value of dS/dγ increases with suppressing SCE. It is demonstrated that I_<ON>(a) is more enhanced with increasing dS/dγ. We discuss optimum conditions for designing a VTCMOS of better characteristics.
- 社団法人電子情報通信学会の論文
- 2001-06-28
著者
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Im Hyunsik
Institute Of Industrial Science
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Inukai T.
Institute of Industrial Science
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Saraya T.
Institute of Industrial Science
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Sakurai T.
Institute of Industrial Science
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Hiramoto T.
Institute of Industrial Science
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Hiramoto T.
Institute Of Industrial Science:vlsi Design And Educational Center
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Sakurai T
Inst. Of Basic Medical Sci. Univ. Of Tsukuba
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