MAEDA S. | ULSI Development Center, Mitsubishi Electric Corporation
スポンサーリンク
概要
関連著者
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MAEDA S.
ULSI Development Center, Mitsubishi Electric Corporation
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YAMAGUCHI Y.
ULSI Development Center, Mitsubishi Electric Corporation
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Maeda S.
Ulsi Development Center Mitsubishi Electric Corporation
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HIRANO Y.
Process Technology Development Div. Renesas Technology Crop.
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HIRANO Y.
ULSI Development Center, Mitsubishi Electric Corporation
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MAEGAWA S.
ULSI Development Center, Mitsubishi Electric Corporation
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IWAMATSU T.
Renesas Technology Corp.
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IWAMATSU T.
Process Technology Development Div. Renesas Technology Crop.
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IWAMATSU T.
ULSI Development Center, Mitsubishi Electric Corporation
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MATSUMOTO T.
ULSI Development Center, Mitsubishi Electric Corporation
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INUISHI M.
ULSI Development Center, Mitsubishi Electric Corporation
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NISHIMURA T.
ULSI Laboratory, Mitsubishi Electric Corporation
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Inuishi M.
Ulsi Development Center Mitsubishi Electric Corporation
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Iwamatsu T.
Ulsi Laboratory Mitsubishi Electric Corporation
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Joachim H.
Ulsi Laboratory Mitsubishi Electric Corporation
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IPPOSHI T.
Process Technology Development Div. Renesas Technology Crop.
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Ipposhi T.
Central Research Laboratory Hitachi Ltd.
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SHIGA K.
ULSI Development Center, Mitsubishi Electric Corporation
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NARUOKA H.
ULSI Development Center, Mitsubishi Electric Corporation
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HATTORI N.
ULSI Development Center, Mitsubishi Electric Corporation
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IPPOSHI T.
ULSI Development Center, Mitsubishi Electric Corporation
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INOUE Y.
ULSI Laboratory, Mitsubishi Electric Corporation
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MIYOSHI H.
ULSI Laboratory, Mitsubishi Electric Corporation
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YASUOKA A.
ULSI Laboratory, Mitsubishi Electric Corporation
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KIM I.-J.
ULSI Laboratory, Mitsubishi Electric Corporation
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FERNANDEZ W.
ULSI Development Center, Mitsubishi Electric Corporation
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EIKYU K.
ULSI Development Center, Mitsubishi Electric Corporation
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Eikyu K.
Ulsi Development Center Mitsubishi Electric Corporation
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Kim I.-j.
Ulsi Laboratory Mitsubishi Electric Corporation
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Naruoka H.
Ulsi Development Center Mitsubishi Electric Corporation
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Yasuoka A.
Ulsi Laboratory Mitsubishi Electric Corporation
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Ishigaki T.
Central Research Laboratory Hitachi Ltd.
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Fernandez W.
Ulsi Development Center Mitsubishi Electric Corporation
著作論文
- A Highly Reliable 0.18μm SOI CMOS Technology for 3.3V/1.8V Operation Using Hybrid Trench Isolation and Dual Gate Oxide
- A Method of Hot Carrier Lifetime Prediction in Partially-Depleted Floating SOI NMOSFETs
- Analysies of the Radiation Caused Characteristics Change in SOI MOSFETS Using Field Shield Isolation
- Clarification of Floating-Body Effects on Current Drivability in Deep Sub-Quarter Micron Partially-Depleted SOI MOSFET's