HIRANO Y. | ULSI Development Center, Mitsubishi Electric Corporation

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著作論文

A Highly Reliable 0.18μm SOI CMOS Technology for 3.3V/1.8V Operation Using Hybrid Trench Isolation and Dual Gate Oxide
Analysies of the Radiation Caused Characteristics Change in SOI MOSFETS Using Field Shield Isolation
Clarification of Floating-Body Effects on Current Drivability in Deep Sub-Quarter Micron Partially-Depleted SOI MOSFET's

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