Maeda S. | Ulsi Development Center Mitsubishi Electric Corporation

スポンサーリンク

概要

関連著者

もっと見る

著作論文

A Highly Reliable 0.18μm SOI CMOS Technology for 3.3V/1.8V Operation Using Hybrid Trench Isolation and Dual Gate Oxide
A Method of Hot Carrier Lifetime Prediction in Partially-Depleted Floating SOI NMOSFETs
Direct Measurement of Transient Drain Current in PD-SOI MOSFETs Using Nuclear Microprobe for Highly Reliable Device Design
Analysies of the Radiation Caused Characteristics Change in SOI MOSFETS Using Field Shield Isolation
Clarification of Floating-Body Effects on Current Drivability in Deep Sub-Quarter Micron Partially-Depleted SOI MOSFET's

スポンサーリンク