特別招待講演 Spin-Transfer Torque Writing Technology (STT-RAM) For Future MRAM

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概要

• 論文の詳細を見る

• Spin-Transfe Torque (STT) is a new discovery that can switch the two states of memory cell in MRAM. This includes all of the great advantages of MRAM and also has a big potential of excellent scalability with future technology node (Ic<100 uA beyond 90 nm).

• 社団法人電子情報通信学会の論文
• 2006-04-06

著者

• Koga Tsuyoshi

  Renesas Technology Corp.

• Nagai Hide

  Grandis Inc.

• Huai Yiming

  Grandis Inc.

• Ueno Shuichi

  Renesas Technology Corp.

関連論文

• 特別招待講演 Spin-Transfer Torque Writing Technology (STT-RAM) For Future MRAM
• Structure, Materials and Shape Optimization of Magnetic Tunnel Junction Devices: Spin-Transfer Switching Current Reduction for Future Magnetoresistive Random Access Memory Application

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