Structure, Materials and Shape Optimization of Magnetic Tunnel Junction Devices: Spin-Transfer Switching Current Reduction for Future Magnetoresistive Random Access Memory Application

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概要

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• We present a systematic study of spin transfer switching in magnetic tunneling junctions (MTJs). Several ways to decrease the switching current density through material and stack engineering and MTJ element shape optimization are explained in detail. The data are presented for switching on MgO-based MTJ with high tunnel magnetoresistance (TMR) of 150% and low intrinsic switching current density $J_{\text{c0}}$ of $(2--3)\times 10^{6}$ A/cm2. Micromagnetic modeling is used to study the spin transfer switching mechanism in nanosecond regime for spin transfer torque random access memory (STT-RAM) pillar. The importance of current-induced Oersted field on the initial onset of precession is discussed.

• 2006-05-15

著者

• Huai Yiming

  Grandis Inc.

• Wang Lien-Chang

  Grandis Inc., 1123 Cadillac Court, Milpitas, CA 95035, U.S.A.

• Apalkov Dmytro

  Grandis Inc., 1123 Cadillac Court, Milpitas, CA 95035, U.S.A.

• Diao Zhitao

  Grandis Inc., 1123 Cadillac Court, Milpitas, CA 95035, U.S.A.

• Ding Yunfei

  Grandis Inc., 1123 Cadillac Court, Milpitas, CA 95035, U.S.A.

• Panchula Alex

  Grandis Inc., 1123 Cadillac Court, Milpitas, CA 95035, U.S.A.

• Pakala Mahendra

  Grandis Inc., 1123 Cadillac Court, Milpitas, CA 95035, U.S.A.

• Chen Eugene

  Grandis Inc., 1123 Cadillac Court, Milpitas, CA 95035, U.S.A.

• Huai Yiming

  Grandis Inc., 1123 Cadillac Court, Milpitas, CA 95035, U.S.A.

関連論文

• 特別招待講演 Spin-Transfer Torque Writing Technology (STT-RAM) For Future MRAM
• Structure, Materials and Shape Optimization of Magnetic Tunnel Junction Devices: Spin-Transfer Switching Current Reduction for Future Magnetoresistive Random Access Memory Application

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