A New Critical Area Simulation Algorithm and Its Application for Failing Bit Analysis
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概要
- 論文の詳細を見る
In order to accelerate yield improvement in semiconductor manufacturing, it is important to prevent the root causes of product-specific failures, such as systematic defects and parametric defects, which are different for each product. We herein propose a method for the investigation of product-specific failures by estimating differences between the actual failing bit signatures (FBSs) and the predicted FBSs caused by random defects. In order to estimate these differences accurately, we have developed a novel algorithm by which to extract the critical area for each FBS. The total failure rate errors of FBSs are within ±0.5% for embedded SRAMs. The proposed method identified the root causes of product-specific failures in 150 and 65nm technology node products.
- (社)電子情報通信学会の論文
- 2011-03-01
著者
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Tsunoda Yoshiyuki
Renesas Technology Corp.
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HAMAMURA Yuichi
Production Engineering Research Laboratory, Hitachi, Ltd.
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MATSUMOTO Chizu
Production Engineering Research Laboratory, Hitachi, Ltd.
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KANAMITSU Kenji
Renesas Technology Corp.
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Kamoda Koji
Production Engineering Research Laboratory Hitachi Ltd.
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Hamamura Yuichi
Production Engineering Research Laboratory Hitachi Ltd.
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Matsumoto Chizu
Production Engineering Research Laboratory Hitachi Ltd.
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Kaneko Yoshiyuki
Renesas Electronics Corp.
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UOZAKI Hiroshi
Renesas Electronics Corp.
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MIYAZAKI Isao
Renesas Electronics Corp.
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KAMOHARA Shiro
Renesas Electronics Corp.
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Tsunoda Yoshiyuki
Renesas Electronics Corp.
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