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Department of Electronics, Faculty of Technology, Kanazawa University | 論文
- Annealing Studies on Hydrogenated Amorphous Silicon-Tin Films
- ESR and Raman Studies on Hydrogenated Amorphous Si-Sn
- F and ^1H NMR and ESR in a-Si:F:H and a-Si:H
- Axially Controlled Solid-Phase Crystallization of Amorphous Silicon
- Influence of Hydrogen Content and Si-H Bond Structure on Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon Films
- Light-Induced-ESR Study of Undoped and N-Doped Hydrogenated Amorphous Silicon
- Spectroscopic Study on N_O-Plasrma Oxidation of Hydrogenated Amorphous Silicon and Behavior of Nitrogen
- Light Soaking of a-Si:H at 77 K
- Structure of Films Prepared by Glow Discharge Decomposition of Hexafluorodisilane
- Hydrogen Incorporation Scheme in a-Si_C_x:H
- Rate Equations for the Creation of Various Metastable Dangling Bonds in a-Si:H Mediated by Floating Bonds
- Properties of Amorphous Si Prepared by RF Sputtering with a High Ar Pressure
- Influence of Oxygen and Deposition Conditions on RF-Sputtered Amorphous Si Films
- Structural Studies on Hydrogenated Amorphous Germanium-Carbon Films Prepared by RF Sputtering
- NMR and ESR Studies on a-Si:H Prepared by Glow Discharge Decomposition of Si_2H_6
- ESR Study on Silica Exposed to Glow-Discharge Plasma and UV Light
- Creation of E' Centers in Silica by Glow-Discharge Plasma and Their Annealing : Condensed Matter
- A Model for the Staebler-Wronski Effect Based on Charged Impurities
- The Effects of H and F on the ESR Signals in a-Si
- The g-Values of Defects in Amorphous C, Si and Ge