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Department of Electronics, Faculty of Technology, Kanazawa University | 論文
- Effect of Charged Defects on Properties of Amorphous Si-Based Alloys
- ESR Studies on the Light-Induced Effect in Si-Based Amorphous Semiconductors
- ESR and X-Ray Diffraction Studies on Ba-Y-Cu-O Superconductors : Electrical Properties of Condensed Matter
- Molecular Beam Epitaxy of SrTiO_3 Films on Si(100)-2 × 1 with SrO Buffer Layer
- Structural and Electrical Properties of P- and B-Doped Polycrystalline Silicon by Plasma-Enhanced CVD at 700℃
- Boron Doping to Microeryslalline SiN_H Films
- Incorporation Effects of Nitrogen into Phosphorus Doped Microcrystalline Si:H Films
- Effect of Reduction in Impurity Content for a-Si:H Films
- ESR and Constant Photocurrent Studies of Surface and Bulk Defects in a-Si:H
- Light-Induced Effects in a-Si:H Studied by ESR and Electrical Measurements
- Photoluminescence in Glow Discharge Deposited Amorphous Si_C_x: H Films
- Electron Spin Resonance of Conduction Electrons in Phosphorus Ion-Implanted Silicon
- ESR Studies on P^+ Ion-Implanted Si
- On the Narrow Lorentzian ESR Signal in Ge-S Glasses
- Effect of Sb Incorporation in Ge-S Glasses
- Plasma-Hydrogenation Effects in Doped CVD Amorphous Silicon Films
- Influence of Various Dopants on Electrical and Optical Properties of Amorphous Ge_S_
- Effect of Impurities on ESR Spectrum in Ge-S Glass
- Photoluminescence of Hydrogenated Amorphous Carbon Films
- Magnetic and Electrical Properties in Amorphous Ge-Se-Fe, Ge-Fe and Se-Fe Films