Thermal Analysis of InGaN/GaN Multiple Quantum Well Light Emitting Diodes with Different Mesa Sizes

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We analyze experimentally and theoretically the thermal characteristics of 470 nm InGaN/GaN light emitting diodes (LEDs) with different mesa sizes for efficient heat dissipation. For various mesa sizes, the junction temperature is measured as a function of injection current by the diode forward voltage method. The junction temperature ($T_{\text{j}}$) increases linearly with injection current and it rises rapidly with the reduction in mesa size. The thermal parameters, such as the junction temperature, temperature profile, and thermal resistance ($R_{\text{th}}$), are obtained from thermal simulations with the heat source density, determined from the measured light–current–voltage data, using a three dimensional heat dissipation model. At 200 mA, the $T_{\text{j}}$ values of LEDs are theoretically calculated as 392.7 and 578 K for $450 \times 450$ and $250 \times 250$ μm2, respectively. The thermal resistance is kept nearly constant due to a linear relationship between junction temperature and injection current and it is reduced as the mesa size increases, indicating a low $R_{\text{th}}$ of $< 75$ K/W for $450 \times 450$ μm2 LED. The $R_{\text{th}}$ values obtained by the thermal simulation are fairly consistent with the experimental data. The use of the substrate with a relatively high thermal conductivity can also improve significantly the $R_{\text{th}}$ of LEDs.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2010-04-25

Thermal Analysis of InGaN/GaN Multiple Quantum Well Light Emitting Diodes with Different Mesa Sizes

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