Strong Light-Extraction Enhancement of GaN-Based Light-Emitting Diodes with Top and Sidewall GaOOH Nanorod Arrays
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概要
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We reported the gallium nitride-based blue light-emitting diodes (LEDs) with top and sidewall gallium oxide hydroxide (GaOOH) nanorod arrays (NRAs). Highly-oriented GaOOH NRAs were formed on the surfaces of LEDs by the electrochemical deposition method using a sputtered tin oxide seed layer. The as-synthesized GaOOH NRAs exhibited a high light-scattering property while maintaining high transparency of {>}90% in the visible wavelength range. For LEDs with top and sidewall GaOOH NRAs, the light output power was significantly enhanced by {\sim}36% and the far-field radiation pattern also became wider compared to the conventional LED. This improvement in light extraction is attributed to the relatively graded refractive index profile and the formation of roughened top and sidewall surfaces by the GaOOH NRAs.
- 2012-10-25
著者
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YU Jae
Department of Advanced Materials Engineering, Hoseo University
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Lee Hee
Department Of Anesthesiology And Pain Medicine Hanyang University College Of Medicine
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Lee Hee
Department of Electronics and Radio Engineering, Institute for Laser Engineering, Kyung Hee University, Yongin, Gyeonggi 446-701, Republic of Korea
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