Ferroelectric Sr_2(Nb, Ta)_2O_7 Thin Films Prepared by Chemical Solution Deposition
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概要
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Ferroelectric Sr_2(Nb, Ta)_2O_7(SNTO)thin films were prepared by chemical solution deposition process, i.e. the modified sol-gel method. The stock solutions were spin-coated onto either Pt/Ti/SiO_2/Si(100)or Pt/TiO_2/SiO_2/Si(100)substrate. After multiple coating/baking steps, dried thin film stacks were annealed for crystallization at 850-1000℃ in oxygen. X-ray diffraction(XRD)and scanning electron microscope(SEM)analyses revealed that the crystallization temperature by modified sol-gel process can be lowered to 850℃ if Pt/TiO_2/SiO_2/Si(100)substrate was used, while temperature higher than 950℃ is required for Pt/Ti/SiO_2/Si(100)substrate. Leakage current and relative permittivity(ε_r)values were measured in the range of about 10^<-9>-10^<-7> A/cm^2, and 30-45, respectively, depending on the composition, heat-treatment and substrate type. Polarization hysteresis loops were not saturated regardless of composition and annealing temperature. Remanent polarization(2P_r)and coercive field(E_c)values for typical SNTO(30/70)film were approximately 1.9 μC/cm^2, and 17 kV/cm, respectively, when ±5 V pulse was applied.
- 社団法人応用物理学会の論文
- 2000-09-30
著者
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Lee Hee
Department Of Chemistry Pohang University Of Science And Technology
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Woo Dong
Department Of Pathology And Cancer Research Institute Seoul National University College Of Medicine
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Kim Chang
Department Of Ceramic Science And Engineering Korea Advanced Institute Of Science And Technology
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Koo C
Inostek Inc. Gyeonggi Kor
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KOO Chang
Department of Materials Science and Engineering, Yeungnam University
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Lee Hee
Department Of Materials Science And Engineering Yeungnam University
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Kim Chang
Department Of Biochemistry University Of Oxford
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Lee Hee
Department Of Anesthesiology And Pain Medicine Hanyang University College Of Medicine
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Woo Dong
Department Of Industrial Engineering Dong A University
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WOO Dong
Department of Materials Science and Engineering, Yeungnam University
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