An Infrared Sensing Material Using a Large-Grain Polysilicon Film
スポンサーリンク
概要
- 論文の詳細を見る
We first report the feasibility of using large-grain polycrystalline silicon films as a sensing material for infrared bolometers. To increase the average grain size of polysilicon films, we used seed selection through ion channeling, which resulted in a large grain size of 1670 Å. The temperature coefficient of resistance (TCR) at 20°C and the grain boundary defect density of the film were as high as $-2.46$%/K for a resistivity of 30 $\Omega$ cm and about $1.752\times 10^{12}$/cm2, respectively. From the measurement of noise characteristics of the film, the value of $k$, $1/ f$ noise parameter, was calculated to be $1.35\times 10^{-9}$. As a result, the estimated detectivity was found to approach $5.6\times 10^{8}$ cm Hz1/2/W.
- 2005-08-15
著者
-
Lee Hee
Department Of Anesthesiology And Pain Medicine Hanyang University College Of Medicine
-
Lee Hee
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Kusong-dong, Yusong-gu, Taejon 305-701, Korea
-
Kim Tae-Sik
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Kusong-dong, Yusong-gu, Taejon 305-701, Korea
関連論文
- Association of estrogen receptor 1 intron 1 C/T polymorphism in Korean vitiligo patients
- Etching Behavior and Damage Recovery of SrBi_2Ta_2O_9 Thin Films
- NMR Studies on the Equilibrium Unfolding of Ketosteroid Isomerase by Urea
- ^N NMR Relaxation Studies of Y14F Mutant of Ketosteroid Isomerase : The Influence of Mutation on Backbone Mobility
- A Study of LPE HgCdTe Wafer Characteristics Flattened with Single-Point Diamond Turning Method (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- A Study of LPE HgCdTe Wafer Characteristics Flattened with Single-Point Diamond Turning Method (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Study of the Thermally Stimulated Current (TSC) characteristics of (Ba,Sr)TiO_3 Thin Films
- Study of the Thermally Stimulated Current (TSC) characteristics of (Ba,Sr)TiO_3 Thin Films
- Immuno-staining with a novel Human Papapillomavirus 16 E7 antibody in various HPV 16 positive tissues(Oncology 7)
- Increased K-ras mutation and expression of S100A4 and MUC2 protein in the malignant intraductal papillary mucinous tumor of the pancreas
- Genetic Diversity of Colored Rice Lines Based on Botanical Characteristics and Simple Sequence Repeat (SSR) Markers
- Origin of Abnormal Grain Growth in Tungsten Bronze Structured Ferroelectric Sr_xBa_Nb_2O_6 Ceramics
- Site Occupancy and Dielectric Characteristics of Strontium Barium Niobate Ceramics : Sr/Ba Ratio Dependence
- 1/f Noise Characteristics of Hydrogenated Long-Wavelength Infrared HgCdTe Photodiode
- Determination of phloroglucinol in human plasma by high-performance liquid chromatography-mass spectrometry
- Serum Cystatin C Is Related to Pulse Wave Velocity Even in Subjects with Normal Serum Creatinine
- Rapid Thermal Diffusion of Indium in p-HgCdTe/CdTe
- Poly(3, 4-Ethylenedioxythiophene) : Poly(Styrenesulfonate) (PEDOT : PSS) Films for the Microbolometer Applications
- Low Power Pixel-Level ADC Readout Circuit for an Amorphous Silicon-Based Microbolometer
- Merkel cell carcinoma combined with squamous cell carcinoma
- In-Pixel Edge Detection Circuit without Non-uniformity Correction for an Infrared Focal Plane Array (IRFPA)
- Platinum Bottom Electrodes Formed by Electron-Beam Evaporation for High-Dielectric Thin Films
- Ellipsometry analysis of hydrogenated HgCdTe(Session A9 Optelectronic Devices)(2004 Asia-Pasific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Ellipsometry analysis of hydrogenated HgCdTe(Session A9 Optelectronic Devices)(2004 Asia-Pasific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Measurement of the Steady-State Minority Carrier Diffusion Length in a HgCdTe Photodiode
- Ferroelectric Sr_2(Nb, Ta)_2O_7 Thin Films Prepared by Chemical Solution Deposition
- Effects of Ir Electrodes on the Dielectric Constants of Ba_Sr_TiO_3 Films
- Optimum Solution of On-Chip A/D Converter for Cooled Type Infrared Focal Plane Array(Electronic Circuits)
- Simulating technetium-99m cerebral perfusion studies with a three-dimensional Hoffman brain phantom: Collimator and filter selection in SPECT neuroimaging
- Deoxidization of Iridium Oxide Thin Film
- Selective Lateral Etching of Al_Ga_As/GaAs Heterojunction Structure Using the Redox Solution of I_2/Kl
- Characterization of the Surface Recombination Velocity of HgCdTe Using a Gate-Controlled Diode
- Extremal problem of a quadratically hyponormal weighted shift (線形作用素の理論と応用に関する最近の発展--RIMS研究集会報告集)
- An Infrared Sensing Material Using a Large-Grain Polysilicon Film
- Cystatin C/creatinine ratio in pediatric kidney disease
- The effect of intrathecal mu, delta, kappa, and alpha-2 agonists on thermal hyperalgesia induced by mild burn on hind paw in rats
- Strong Light-Extraction Enhancement of GaN-Based Light-Emitting Diodes with Top and Sidewall GaOOH Nanorod Arrays
- Tumor-to-tumor metastasis : Hepatocellular carcinoma metastatic to parathyroid adenoma
- Fabrication and Characterization of Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) (P(VDF-TrFE)) Thin Film on Flexible Substrate by Detach-and-Transferring
- Effects of Hydrazine Surface Treatment on HgCdTe Long-Wavelength Infrared Photodiodes
- Influence of TiO2 Adhesion Layer Thickness on Properties of (Ba,Sr)TiO3 Thin Films
- Thermal Analysis of InGaN/GaN Multiple Quantum Well Light Emitting Diodes with Different Mesa Sizes
- Site Occupancy and Dielectric Characteristics of Strontium Barium Niobate Ceramics: Sr/Ba Ratio Dependence