Selective Lateral Etching of Al_<0.3>Ga_<0.7>As/GaAs Heterojunction Structure Using the Redox Solution of I_2/Kl

概要

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Selective lateral etching for an Al_<0.3>Ga_<0.7>As/GaAs system was conducted with iodine-potassium iodide (I_2 / Kl)redox solution having high preferential etching characteristics, The selectivity of Al_<0.3>Ga_<0.7>As relative to GaAs varied with the molar ratio of I_2/Kl, pH, stripe direction, and stirring speed of the solution. The undercut widths of Al_<0.3>Ga_<0.7>As below the GaAs layer were measured by observing the etched cross-section with a scanning electron microscope. For the [100] directional stripe, the undercut width of Al_<0.3>Ga_<0.7>As was measured up to about 3 μm after etching for l min under the etching conditions of [I_2]/[KI] = 0.67 and pH=2.76. As a new application to the Al_<0.3>Ga_<0.7>As/GaAs heterojunction bipolar transistor (HBT) with x<_- 0.3, selective lateral etching was carried out to reduce the extrinsic base-collector capacitance of the HBT. As the restult of capacitance-voltage (C-V)measurement, the base-collector capacitance of the lateral etched HBT was reduced to about 50% of that of the conventional HBT.
社団法人応用物理学会の論文
1997-03-01