Characterization of the Surface Recombination Velocity of HgCdTe Using a Gate-Controlled Diode
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概要
- 論文の詳細を見る
A four-terminal gate-controlled diode structure has been used to characterize the surface recombination velocity of HgCdTe. The electrical performance of the gate-controlled diode fabricated using χ = 0.3 HgCdTe was characterized by capacitance-gate voltage and current-gate voltage measurements. A theoretical model was developed for the total dark current in the gate-controlled diode structure and used to fit the experimental data. Data fitting when the experimental device was operated in depletion mode allowed the simultaneous extraction of the surface recombination velocity, 170 cm/s, the generation lifetime in the n-p junction depletion region, 12 ns, and the generation lifetime in the gate induced junction depletion region, 500 ns.
- 社団法人応用物理学会の論文
- 2000-02-15
著者
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Lee Hee
Department Of Chemistry Pohang University Of Science And Technology
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Lee Hee
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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CHOI Jong-Hwa
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology
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Choi Jong-hwa
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Lee Hee
Department Of Anesthesiology And Pain Medicine Hanyang University College Of Medicine
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