Simulation of Nanoscale Two-Bit Not-And-type Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory Devices with a Separated Double-Gate Fin Field Effect Transistor Structure Containing Different Tunneling Oxide Thicknesses
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概要
- 論文の詳細を見る
Not-and (NAND)-type silicon–oxide–nitride–oxide–silicon (SONOS) nonvolatile memory (NVM) devices with a separated double-gate (SDG) Fin field effect transistor structure were proposed to reduce the unit cell size of such memory devices and increase their memory density in comparison with that of conventional NVM devices. The proposed memory device consisted of a pair of control gates separated along the length of the Fin channel direction. Each SDG had a different thickness of the tunneling oxide to operate the proposed memory device as a two-bit/cell device. A technology computer-aided design simulation was performed to investigate the program/erase and two-bit characteristics. The simulation results show that the proposed devices can be used to increase the scaling down capability and charge storage density of NAND-type SONOS NVM devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-06-25
著者
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Kim Tae
Advanced Semiconductor Research Center Division Of Electrical And Computer Engineering Hanyang Unive
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Park Sang
Advanced Materials Research Laboratory Comtecs Ltd.
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Kim Dong
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Oh Se
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Kim Hyun
Nanoscale Semiconductor Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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