Effect of Fullerene Concentration on Flat-Band Voltage Shift of Capacitance–Voltage Curve in Organic Memory Devices Fabricated Using Hybrid Poly(4-vinyl phenol) Active Layer Containing Fullerene
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概要
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Organic memory devices based on a hybrid poly(4-vinyl phenol) (PVP) layer containing fullerene (C60) were formed by a spin coating method. Atomic force microscopy (AFM) images showed that the surface of the PVP layer containing C60 was uniform. Capacitance–voltage ($C$–$V$) measurements on Al/C60 embedded in PVP layer/p-Si(100) devices at room temperature showed a hysteresis with a large flat-band voltage shift due to the existence of C60 molecules, indicative of the charge storage in the C60 molecules. The magnitude of the flat-band voltage shift for the memory devices with a hybrid active layer consisting of PVP and C60 increased with increasing C60 concentration.
- 2008-06-25
著者
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Kim Tae
Advanced Semiconductor Research Center Division Of Electrical And Computer Engineering Hanyang Unive
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Kim Hyuk
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Ham Jung
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Jung Jae
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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