Electrical Properties and Operating Mechanisms of Nonvolatile Organic Memory Devices Fabricated Utilizing Hybrid Poly(N-vinylcarbazole) and C60 Composites

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Organic memory devices based on hybrid poly(N-vinylcarbazole) (PVK) and C60 composites were fabricated with a spin-coating method. Atomic force microscopy images showed that the surface of the PVK layer containing the C60 molecules was relatively smooth. Capacitance–voltage ($C$–$V$) measurements on the Al/C60 embedded in PVK layer/p-Si(100) device at room temperature showed a clockwise hysteresis with a large flatband voltage shift due to the existence of the C60 molecules in the PVK layer, indicative of charge storage in the embedded C60 molecules. The clockwise direction of the $C$–$V$ hysteresis for the devices was attributed to carrier tunneling through the PVK layer emitting from the Al gate electrode, and the negative and positive flatband voltage shifts of the $C$–$V$ curves originated from the holes and electrons captured in the C60 molecules, respectively. Possible operating mechanisms corresponding to writing and erasing processes for the Al/C60 embedded in PVK layer/p-Si (100) device are described on the basis of the $C$–$V$ results.
2008-06-25