A design of temperature-compensated complementary metal-oxide semiconductor voltage reference sources with a small temperature coefficient (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

概要

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A novel design for temperature-compensated complementary metal-oxide semiconductor (CMOS) voltage reference sources by using the 1st order voltage reference taking into account the electrical property of the conventional current generator was proposed to minimize a temperature coefficient. A temperature coefficient of the proposed voltage reference source was estimated by using the current generator, which operates at smaller or larger temperature in comparison with the optimized operating temperature. The temperature coefficient at temperature range between -40℃ and 125℃, obtained from the simulated data by using SMIC 0.35μm CMOS technology, was 3.68ppm/℃. The simulated results indicate that the proposed temperature-compensated CMOS voltage reference sources by using the 1st order voltage reference taking into account the electrical properties of the conventional current generator can be used to decrease the temperature coefficient.
社団法人電子情報通信学会の論文
2007-06-18