Kim Tae | Advanced Semiconductor Research Center Division Of Electrical And Computer Engineering Hanyang Unive

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著作論文

A design of temperature-compensated complementary metal-oxide semiconductor voltage reference sources with a small temperature coefficient (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
A design of temperature-compensated complementary metal-oxide semiconductor voltage reference sources with a small temperature coefficient (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
A Design of Temperature-Compensated Complementary Metal-Oxide Semiconductor Voltage Reference Sources with a Small Temperature Coefficient
Optical and Electrical Properties of Si Nanocrystals Embedded in SiO_2 Layers
Enhancement of the Ferromagnetic Transition Temperature in Self-Assembled (Ga_Mn_x)As Quantum Wires
Unique Multilevel Flash Memory Devices Operating at High Programming Speed, Designed Utilizing Novel Asymmetric Gates
Unique Multilevel Flash Memory Devices Operating at High Programming Speed, Designed Utilizing Novel Asymmetric Gates
Effect of Fullerene Concentration on Flat-Band Voltage Shift of Capacitance–Voltage Curve in Organic Memory Devices Fabricated Using Hybrid Poly(4-vinyl phenol) Active Layer Containing Fullerene
Efficiency Enhancement and Color Stabilization in Organic Light-Emitting Devices Utilizing a Fullerene–Polymer Composite Layer Acting as a Hole Transport Layer
Enhanced Pixel-Driving Circuits for Active-Matrix Organic-Light-Emitting Diode Displays with Large Sizes
Electrical Properties and Operating Mechanisms of Nonvolatile Organic Memory Devices Fabricated Utilizing Hybrid Poly(N-vinylcarbazole) and C60 Composites
Optical Properties of Self-Assembled ZnO Nanocrystals Embedded in a $ p$-Phenylene Biphenyltetracarboximide Polyimide Layer
Design and Power Tests of 500 MHz RF Cavity of CW Microtron for Industrial Applications
Simulation of Nanoscale Two-Bit Not-And-type Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory Devices with a Separated Double-Gate Fin Field Effect Transistor Structure Containing Different Tunneling Oxide Thicknesses
Design of Unique NAND Flash Memory Cells with Low Program Disturbance Utilizing Novel Booster Line
Formation and Characterization of (Zn1-xMnx)O Diluted Magnetic Semiconductors Grown on (0001) Al2O3 Substrates
Effect of Indium--Tin-Oxide Schottky Contact on the Resistance Switching of NiO Film
Dependence of Structural and Electrical Properties on Substrate Temperature for Annealed C54 TiSi2 Thin Films Grown on p-Si Substrates
Optical Properties of Terahertz Wave Emitter Fabricated by Using CdxZn1-xTe Single Crystals
Effect of Thermal Annealing on Structural, Electrical, and Magnetic Properties of Ag-doped La0.67Ca0.33MnO3 Thin Films Grown on LaAlO3 Substrates
Effect of Indium-Tin-Oxide Schottky Contact on the Resistance Switching of NiO Film
Thermo- and Photo-annealing of ZnO Nanocrystals
High-Speed Programming Not-OR Flash Memory Cells With Titanium Disilicide Drain
Modulation of Excitonic Emission from ZnO Nanocrystals by Visible Light Illumination

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