Dependence of Structural and Electrical Properties on Substrate Temperature for Annealed C54 TiSi2 Thin Films Grown on p-Si Substrates
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概要
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Substrate temperature effects on the structural and electrical properties of annealed C54 TiSi2 thin films grown on p-Si (100) substrates using a sputtering method were determined with the objective of improving the properties of the films. The results of scanning electron microscopy, energy-dispersive X-ray fluorescence, and X-ray diffraction measurements showed that the thickness of the C54 TiSi2 thin films increases with increasing substrate temperature and that the sheet resistance decreases with increasing substrate temperature up to 200°C. These results indicate that the structural and electrical properties of annealed C54 TiSi2 thin films grown on p-Si (100) substrates using a sputtering method can be improved by increasing substrate temperature, and that these films grown on p-Si(100) substrates using a high-temperature sputtering method hold promise for potential applications in Si-based ultralarge-scale integration devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-10-15
著者
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LEE Sejoon
Department of Semiconductor Science, Dongguk University
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KIM Deuk
Department of Semiconductor Science, Dongguk University
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Kim Tae
Advanced Semiconductor Research Center Division Of Electrical And Computer Engineering Hanyang Unive
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Lee Sejoon
Department of Semiconductor Science, Dongguk University, 3-26 Pildong, Chungku, Seoul 100-715, Korea
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