Effect of Thermal Annealing on Structural, Electrical, and Magnetic Properties of Ag-doped La0.67Ca0.33MnO3 Thin Films Grown on LaAlO3 Substrates
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概要
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Resistance as a function of temperature showed that the metal–insulator transition temperatures of as-grown and annealed Ag-doped La0.67Ca0.33MnO3 thin films were 235 and 300 K, respectively, and that the metal–insulator transition ranges of these films were relatively narrow, indicative of a sharp phase transition. The temperature coefficient of resistance was as high as 8% at 276 K. The magnetoresistance ratio of the annealed Ag-doped film under a magnetic field of 5 T was approximately 55% at 285 K.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-02-15
著者
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Kim Tae
Advanced Semiconductor Research Center Division Of Electrical And Computer Engineering Hanyang Unive
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Liu Xiang
Institute of Advanced Material for Photoelectronics, Kunming University of Science and Technology, Kunming, Yunnan 650051, China
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Zhang Peng-Xiang
Institute of Advanced Material for Photoelectronics, Kunming University of Science and Technology, Kunming, Yunnan 650051, China
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Peng Ju-Bo
Institute of Advanced Material for Photoelectronics, Kunming University of Science and Technology, Kunming, Yunnan 650051, China
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Zhu Shao-Jiang
Institute of Advanced Material for Photoelectronics, Kunming University of Science and Technology, Kunming, Yunnan 650051, China
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Habermeier H.-U.
Max-Planck-Institut für Festkörperforschung, D-70506 Stuttgart, Germany
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