A Design of Temperature-Compensated Complementary Metal-Oxide Semiconductor Voltage Reference Sources with a Small Temperature Coefficient
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概要
- 論文の詳細を見る
A novel design for temperature-compensated complementary metal-oxide semiconductor (CMOS) voltage reference sources by using the 1st order voltage reference taking into account the electrical property of the conventional current generator was proposed to minimize a temperature coefficient. A temperature coefficient of the proposed voltage reference source was estimated by using the current generator, which operated at smaller or larger temperature in comparison with the optimized operating temperature. The temperature coefficient at temperature range between -40°C and 125°C, obtained from the simulated data by using hynix 0.35μm CMOS technology, was 3.33ppm/°C. The simulated results indicate that the proposed temperature-compensated CMOS voltage reference sources by using the 1st order voltage reference taking into account the electrical properties of the conventional current generator can be used to decrease the temperature coefficient.
- （社）電子情報通信学会の論文
- 2008-05-01
著者
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KIM Tae
Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang Uni
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Kim Tae
Advanced Semiconductor Research Center Division Of Electrical And Computer Engineering Hanyang Unive
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Kim Tae
Hanyang Univ. Seoul Kor
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Park Kyung
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang Un
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Woo Sun
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang Un
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Kwack Kae
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang Un
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Kwack Kae
Advanced Semiconductor Research Center Division Of Electronics And Computer Engineering Hanyang Univ
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Kwack Kae
Advanced Semiconductor Research Center Division Of Electrical And Computer Engineering Hanyang Unive
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Woo Sun
Advanced Semiconductor Research Center Division Of Electronics And Computer Engineering Hanyang Univ
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Park Kyung
Advanced Semiconductor Research Center Division Of Electronics And Computer Engineering Hanyang Univ
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