Unique Multilevel Flash Memory Devices Operating at High Programming Speed, Designed Utilizing Novel Asymmetric Gates
スポンサーリンク
概要
- 論文の詳細を見る
Unique multilevel cell (MLC) flash memory devices utilizing novel asymmetric gates were proposed to enhance a writing time. Different coupling ratios and maximum storage charges of the MLC flash memories with the asymmetric floating gates decreased the number of step pulses for the storage of the multi-bits in each memory cell. These results indicate that the writing time of the MLC flash memories can be improved by using the asymmetric floating gate structure consisting of the different coupling ratio and the maximum storage charge in the floating gates.
- 2005-05-10
著者
-
Kim Tae
Advanced Semiconductor Research Center Division Of Electrical And Computer Engineering Hanyang Unive
-
Kwack Kae
Advanced Semiconductor Research Center Division Of Electrical And Computer Engineering Hanyang Unive
-
Kim Jae
Advanced Semiconductor Research Center Department Of Electronics And Computer Engineering Hanyang Un
-
Kwon Man
Department Of Nanostructure Semiconductor Engineering Hanyang University
-
Kim Jae
Advanced Semiconductor Research Center, Department of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
-
Kwack Kae
Advanced Semiconductor Research Center, Department of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
-
Kim Tae
Advanced Semiconductor Research Center, Department of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
関連論文
- A design of temperature-compensated complementary metal-oxide semiconductor voltage reference sources with a small temperature coefficient (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- A design of temperature-compensated complementary metal-oxide semiconductor voltage reference sources with a small temperature coefficient (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- A Design of Temperature-Compensated Complementary Metal-Oxide Semiconductor Voltage Reference Sources with a Small Temperature Coefficient
- Optical and Electrical Properties of Si Nanocrystals Embedded in SiO_2 Layers
- Enhancement of the Ferromagnetic Transition Temperature in Self-Assembled (Ga_Mn_x)As Quantum Wires
- Unique Multilevel Flash Memory Devices Operating at High Programming Speed, Designed Utilizing Novel Asymmetric Gates
- Unique Multilevel Flash Memory Devices Operating at High Programming Speed, Designed Utilizing Novel Asymmetric Gates
- A Characterization of Endurance in 64 Mbit Ferroelectric Random Access Memory by Analyzing the Space Charge Concentration
- Effect of Fullerene Concentration on Flat-Band Voltage Shift of Capacitance–Voltage Curve in Organic Memory Devices Fabricated Using Hybrid Poly(4-vinyl phenol) Active Layer Containing Fullerene
- Efficiency Enhancement and Color Stabilization in Organic Light-Emitting Devices Utilizing a Fullerene–Polymer Composite Layer Acting as a Hole Transport Layer
- Enhanced Pixel-Driving Circuits for Active-Matrix Organic-Light-Emitting Diode Displays with Large Sizes
- Electrical Properties and Operating Mechanisms of Nonvolatile Organic Memory Devices Fabricated Utilizing Hybrid Poly(N-vinylcarbazole) and C60 Composites
- Optical Properties of Self-Assembled ZnO Nanocrystals Embedded in a $ p$-Phenylene Biphenyltetracarboximide Polyimide Layer
- Design and Power Tests of 500 MHz RF Cavity of CW Microtron for Industrial Applications
- Simulation of Nanoscale Two-Bit Not-And-type Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory Devices with a Separated Double-Gate Fin Field Effect Transistor Structure Containing Different Tunneling Oxide Thicknesses
- Design of Unique NAND Flash Memory Cells with Low Program Disturbance Utilizing Novel Booster Line
- Formation and Characterization of (Zn1-xMnx)O Diluted Magnetic Semiconductors Grown on (0001) Al2O3 Substrates
- Effect of Indium--Tin-Oxide Schottky Contact on the Resistance Switching of NiO Film
- Dependence of Structural and Electrical Properties on Substrate Temperature for Annealed C54 TiSi2 Thin Films Grown on p-Si Substrates
- Optical Properties of Terahertz Wave Emitter Fabricated by Using CdxZn1-xTe Single Crystals
- Effect of Thermal Annealing on Structural, Electrical, and Magnetic Properties of Ag-doped La0.67Ca0.33MnO3 Thin Films Grown on LaAlO3 Substrates
- Effect of Indium-Tin-Oxide Schottky Contact on the Resistance Switching of NiO Film
- Thermo- and Photo-annealing of ZnO Nanocrystals
- High-Speed Programming Not-OR Flash Memory Cells With Titanium Disilicide Drain
- Modulation of Excitonic Emission from ZnO Nanocrystals by Visible Light Illumination