High-Speed Programming Not-OR Flash Memory Cells With Titanium Disilicide Drain
スポンサーリンク
概要
- 論文の詳細を見る
A Not-OR (NOR) flash memory cell using a titanium disilicide (TiSi2) drain was designed to increase programming speed and driving current. This NOR flash memory cell with a TiSi2 drain was proposed on the basis of the fundamental structure of conventional NOR flash memory cells with a length of 90 nm. The programming speed and driving current of the NOR flash memory cell with a TiSi2 drain were simulated using T-SUPREM4 and MEDICI. The simulation results showed that the heavily doped carriers existing in the TiSi2 drain can be used to increase the programming speed of the NOR flash memory cell and that a decrease in source/drain series resistance utilizing the silicide in the NOR flash memory cell with a TiSi2 drain helps increase driving current density.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-08-25
著者
-
Kim Tae
Advanced Semiconductor Research Center Division Of Electrical And Computer Engineering Hanyang Unive
-
Kwack Kae
Advanced Semiconductor Research Center Division Of Electrical And Computer Engineering Hanyang Unive
-
Kim Kyeong-Rok
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
関連論文
- A design of temperature-compensated complementary metal-oxide semiconductor voltage reference sources with a small temperature coefficient (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- A design of temperature-compensated complementary metal-oxide semiconductor voltage reference sources with a small temperature coefficient (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- A Design of Temperature-Compensated Complementary Metal-Oxide Semiconductor Voltage Reference Sources with a Small Temperature Coefficient
- Optical and Electrical Properties of Si Nanocrystals Embedded in SiO_2 Layers
- Enhancement of the Ferromagnetic Transition Temperature in Self-Assembled (Ga_Mn_x)As Quantum Wires
- Unique Multilevel Flash Memory Devices Operating at High Programming Speed, Designed Utilizing Novel Asymmetric Gates
- Unique Multilevel Flash Memory Devices Operating at High Programming Speed, Designed Utilizing Novel Asymmetric Gates
- Effect of Fullerene Concentration on Flat-Band Voltage Shift of Capacitance–Voltage Curve in Organic Memory Devices Fabricated Using Hybrid Poly(4-vinyl phenol) Active Layer Containing Fullerene
- Efficiency Enhancement and Color Stabilization in Organic Light-Emitting Devices Utilizing a Fullerene–Polymer Composite Layer Acting as a Hole Transport Layer
- Enhanced Pixel-Driving Circuits for Active-Matrix Organic-Light-Emitting Diode Displays with Large Sizes
- Electrical Properties and Operating Mechanisms of Nonvolatile Organic Memory Devices Fabricated Utilizing Hybrid Poly(N-vinylcarbazole) and C60 Composites
- Optical Properties of Self-Assembled ZnO Nanocrystals Embedded in a $ p$-Phenylene Biphenyltetracarboximide Polyimide Layer
- Design and Power Tests of 500 MHz RF Cavity of CW Microtron for Industrial Applications
- Simulation of Nanoscale Two-Bit Not-And-type Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory Devices with a Separated Double-Gate Fin Field Effect Transistor Structure Containing Different Tunneling Oxide Thicknesses
- Design of Unique NAND Flash Memory Cells with Low Program Disturbance Utilizing Novel Booster Line
- Formation and Characterization of (Zn1-xMnx)O Diluted Magnetic Semiconductors Grown on (0001) Al2O3 Substrates
- Effect of Indium--Tin-Oxide Schottky Contact on the Resistance Switching of NiO Film
- Dependence of Structural and Electrical Properties on Substrate Temperature for Annealed C54 TiSi2 Thin Films Grown on p-Si Substrates
- Optical Properties of Terahertz Wave Emitter Fabricated by Using CdxZn1-xTe Single Crystals
- Effect of Thermal Annealing on Structural, Electrical, and Magnetic Properties of Ag-doped La0.67Ca0.33MnO3 Thin Films Grown on LaAlO3 Substrates
- Effect of Indium-Tin-Oxide Schottky Contact on the Resistance Switching of NiO Film
- Thermo- and Photo-annealing of ZnO Nanocrystals
- High-Speed Programming Not-OR Flash Memory Cells With Titanium Disilicide Drain
- Modulation of Excitonic Emission from ZnO Nanocrystals by Visible Light Illumination