Unique Multilevel Flash Memory Devices Operating at High Programming Speed, Designed Utilizing Novel Asymmetric Gates
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-06-10
著者
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KIM Tae
Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang Uni
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Kim Tae
Advanced Semiconductor Research Center Division Of Electrical And Computer Engineering Hanyang Unive
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Kwack Kae
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang Un
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Kwack Kae
Advanced Semiconductor Research Center Division Of Electrical And Computer Engineering Hanyang Unive
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Kim Jae
Advanced Semiconductor Research Center Department Of Electronics And Computer Engineering Hanyang Un
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KWON Man
Department of Nanostructure Semiconductor Engineering, Hanyang University
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Kwon Man
Department Of Nanostructure Semiconductor Engineering Hanyang University
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Kwon Man
Department of Nanostructure Semiconductor Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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