Design of Unique NAND Flash Memory Cells with Low Program Disturbance Utilizing Novel Booster Line
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概要
- 論文の詳細を見る
Unique NAND flash memory cells with a booster line structure were designed to increase the channel voltage of a program-inhibited cell during program cycles. When a program voltage was applied to the selected word line, booster-line voltage coupled with control gate potential induced a high voltage in a program-inhibited channel. Because the turning on of the unselected cells was initiated by the booster line during programming, an unselected word line was maintained in the floating state without applying a pass voltage. Program disturbance in the NAND flash memory cell was decreased using a booster-line boosting scheme, and the cell's pass disturbance was effectively eliminated. The proposed unique NAND flash memory cell with a booster line can be used to improve the reliability of nanoscale NAND flash memories.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-06-15
著者
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Kim Tae
Advanced Semiconductor Research Center Division Of Electrical And Computer Engineering Hanyang Unive
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Kwack Kae
Advanced Semiconductor Research Center Division Of Electrical And Computer Engineering Hanyang Unive
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Kim Jae-ho
Advanced Semiconductor Research Center Division Of Electronics And Computer Engineering Hanyang Univ
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Kim Jae-Ho
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Mun Kyung
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Kwack Kae
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Kim Tae
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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