Park Sang | Advanced Materials Research Laboratory Comtecs Ltd.
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概要
関連著者
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Park Sang
Advanced Materials Research Laboratory Comtecs Ltd.
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Jeong Jae
Advanced Technology Group Cs Management Center Samsung Electronics Co. Ltd
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Cho Chae-ryong
Busan Branch Korea Basic Science Institute
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Ha J
Advanced Technology Group Cs Management Center Samsung Electronics Co. Ltd
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Jeong Se-young
Advanced Materials Research Laboratory Comtecs Ltd.
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Park S
Advanced Technology Group Cs Management Center Samsung Electronics Co. Ltd
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Cho Yong
Advanced Materials Research Laboratory Comtecs Ltd.
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Jung Gue
Electronic Component Reliability Center Samsung Sdi Co. Ltd
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Ha Jong
Advanced Technology Group, CS Management Center, SAMSUNG ELECTRONICS CO., LTD
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Kim Tae
Advanced Semiconductor Research Center Division Of Electrical And Computer Engineering Hanyang Unive
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Kim Dong
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Oh Se
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Kim Hyun
Nanoscale Semiconductor Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Cho Chae-Ryong
Busan Branch, Korea Basic Science Institute, Busan 609-735, Korea
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Cho Yong
Advanced Materials Research Laboratory, COMTECS Ltd., Daegu 704-702, Korea
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Jeong Se-Young
Advanced Materials Research Laboratory, COMTECS Ltd., Daegu 704-702, Korea
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Park Sang
Advanced Materials Research Laboratory, COMTECS Ltd., Daegu 704-702, Korea
著作論文
- Raman Scattering Behaviors of GaN Single Crystal Grown by a Na Flux Method
- Electrical Overstress Failure Mechanism Investigation about High-power Scan Driver IC for Plasma Display Panel(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Electrical Overstress Failure Mechanism Investigation about High-power Scan Driver IC for Plasma Display Panel(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Simulation of Nanoscale Two-Bit Not-And-type Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory Devices with a Separated Double-Gate Fin Field Effect Transistor Structure Containing Different Tunneling Oxide Thicknesses
- Raman Scattering Behaviors of GaN Single Crystal Grown by a Na Flux Method