Raman Scattering Behaviors of GaN Single Crystal Grown by a Na Flux Method
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-03-15
著者
-
Cho Chae-ryong
Busan Branch Korea Basic Science Institute
-
Jeong Se-young
Advanced Materials Research Laboratory Comtecs Ltd.
-
Cho Yong
Advanced Materials Research Laboratory Comtecs Ltd.
-
Park Sang
Advanced Materials Research Laboratory Comtecs Ltd.
関連論文
- Heteroepitaxial Growth and Ferroelectricity of Bi_La_Ti_3O_ Films on n-GaN/Al_2O_3(0001) Substrates Prepared by Pulsed-Laser Deposition
- Raman Scattering Behaviors of GaN Single Crystal Grown by a Na Flux Method
- Electrical Overstress Failure Mechanism Investigation about High-power Scan Driver IC for Plasma Display Panel(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Electrical Overstress Failure Mechanism Investigation about High-power Scan Driver IC for Plasma Display Panel(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Simulation of Nanoscale Two-Bit Not-And-type Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory Devices with a Separated Double-Gate Fin Field Effect Transistor Structure Containing Different Tunneling Oxide Thicknesses
- Raman Scattering Behaviors of GaN Single Crystal Grown by a Na Flux Method