Highly Reduced Anatase TiO2-\delta Thin Films Obtained via Low-Temperature Reduction
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概要
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We report the preparation and physical properties of reduced anatase TiO2-\delta thin films obtained via a low-temperature (low-$T$) reduction using CaH2. The oxygen amounts were controlled in a wider range than ever reported. Some highly reduced anatase films showed resistivities as low as $10^{-3}$ $\Omega$ cm at room temperature, both in metallic and semiconducting states. The most conducting metallic sample has very high carrier concentration of $1.6\times 10^{21}$ cm-3, comparable with those of metal-doped anatase films. Moreover, the magnetoresistance of the films changed its sign twice as a function of $\delta$.
- 2011-03-25
著者
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Kitada Atsushi
Department Of Chemistry Graduate School Of Science Kyoto University
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Yoshimura Kazuyoshi
Department Of Applied Science Tokyo Electrical Engineering College
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Kageyama Hiroshi
Department Of Applied Chemistry Faculty Of Engineering Osaka University
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Kobayashi Yoji
Department Of Earth Sciences Faculty Of Science Kobe University
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Kasahara Shigeru
Research Center for Low Temperature and Materials Sciences, Kyoto University, Kyoto 606-8502, Japan
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Terashima Takahito
Research Center for Low Temperature and Materials Sciences, Kyoto University, Kyoto 606-8502, Japan
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Kobayashi Yoji
Department of Energy and Hydrocarbon Chemistry, Graduate School of Engineering, Kyoto University, Nishikyo, Kyoto 615-8510, Japan
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Terashima Takahito
Research Center for Low Temperature and Materials Sciences, Kyoto University, Sakyo, Kyoto 606-8501, Japan
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Terashima Takahito
Research Center for Low Temperature and Materials Science, Kyoto University, Kyoto 606-8502, Japan
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