Formation of thick cubic boron nitride films in noble gases
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概要
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A radio frequency magnetron sputtering method, specifically tailored for the deposition of thick, adherent cubic boron nitride (c-BN) thin films on silicon substrates, was developed. The surface morphology of the boron nitride thin films was changed by altering the noble gases (Kr, Ar, Ne, and He) in the chamber present during the sputtering. The sample prepared in the gas with He showed especially good adhesion. This method enabled us to grow a 1.7-μm-thick c-BN thin film on a Si(100) substrate in only rare gases at a low temperature for the first time. Fourier transform infrared spectroscopy (FT-IR) indicated that the fraction of sp3-bonded BN in the thick films was above 60%.
著者
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NIIHARA Koichi
Extreme Energy-Density Research Institute, Nagaoka University of Technology
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Ohori Tetsutaro
Extreme Energy-Density Research Institute, Nagaoka University of Technology
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Asami Hiroki
Extreme Energy-Density Research Institute, Nagaoka University of Technology
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Shirahata Jun
Extreme Energy-Density Research Institute, Nagaoka University of Technology
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SUZUKI Tsuneo
Extreme Energy-Density Research Institute, Nagaoka University of Technology
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NAKAYAMA Tadachika
Extreme Energy-Density Research Institute, Nagaoka University of Technology
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SUEMATSU Hisayuki
Extreme Energy-Density Research Institute, Nagaoka University of Technology
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Asami H
Hokkaido Fish Hatchery
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Niihara Koichi
Extreme Energy-density Res. Inst. Nagaoka Univ. Of Technol.
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Suzuki Tsuneo
Extreme Energy-density Res. Inst. Nagaoka Univ. Of Technol.
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Nakayama Tadachika
Extreme Energy-density Research Institute Nagaoka University Of Technology
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Suematsu Hisayuki
Extreme Energy-density Res. Inst. Nagaoka Univ. Of Technol.
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